All MOSFET. BUK9520-100A Datasheet

 

BUK9520-100A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9520-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 10 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 63 A
   Maximum Junction Temperature (Tj): 175 °C
   Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm
   Package: TO220AB

 BUK9520-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9520-100A Datasheet (PDF)

 ..1. Size:321K  philips
buk9520-100a buk9620-100a buk9620-100a.pdf

BUK9520-100A BUK9520-100A

BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 3.1. Size:197K  philips
buk9520-100b.pdf

BUK9520-100A BUK9520-100A

BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.1. Size:52K  philips
buk9520-55.pdf

BUK9520-100A BUK9520-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist

 8.1. Size:52K  philips
buk9524-55 2.pdf

BUK9520-100A BUK9520-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9524-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 45 Alow on-state resist

 8.2. Size:324K  philips
buk9523-75a buk9623-75a.pdf

BUK9520-100A BUK9520-100A

BUK9523-75A; BUK9623-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9523-75A in SOT78 (TO-220AB)BUK9623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

 8.3. Size:340K  philips
buk952r8-30b buk962r8-30b.pdf

BUK9520-100A BUK9520-100A

BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state

 8.4. Size:297K  philips
buk9529-100b buk9629-100b.pdf

BUK9520-100A BUK9520-100A

BUK95/9629-100BTrenchMOS logic level FETRev. 01 18 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9529-100B in SOT78 (TO-220AB)BUK9629-100B in SOT404 (D2-PAK).1.2 Features Very low on-st

 8.5. Size:52K  philips
buk9528-55 2.pdf

BUK9520-100A BUK9520-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 40 Alow on-state resist

 8.6. Size:77K  philips
buk9528 buk9628-100a.pdf

BUK9520-100A BUK9520-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 49 Atrench techn

 8.7. Size:333K  philips
buk9524-55a buk9624-55a.pdf

BUK9520-100A BUK9520-100A

BUK9524-55A; BUK9624-55ATrenchMOS logic level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9524-55A in SOT78 (TO-220AB)BUK9624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tech

 8.8. Size:317K  philips
buk9528-55a buk9528-55a buk9628-55a.pdf

BUK9520-100A BUK9520-100A

BUK9528-55A; BUK9628-55ATrenchMOS logic level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9528-55A in SOT78 (TO-220AB)BUK9628-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

 8.9. Size:213K  nxp
buk952r8-60e.pdf

BUK9520-100A BUK9520-100A

BUK952R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.10. Size:213K  nxp
buk952r3-40e.pdf

BUK9520-100A BUK9520-100A

BUK952R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

Datasheet: BUK9512-55B , BUK9514-55A , BUK95150-55A , BUK9515-100A , BUK9516-55A , BUK9516-75B , BUK95180-100A , BUK9518-55A , IRFP250 , BUK9520-100B , BUK9520-55A , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B , BUK9535-100A , BUK9535-55A .

 

 
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