75329P MOSFET. Datasheet pdf. Equivalent
Type Designator: 75329P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 49 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: TO220
75329P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75329P Datasheet (PDF)
0.1. huf75329g3 huf75329p3 huf75329s3s.pdf 
Size:252K _fairchild_semi
HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs • 49A, 55V These N-Channel power MOSFETs • Ultra Low On-Resistance, rDS(ON) = 0.024Ω are manufactured using the • Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Available on t
0.2. hufa75329p3 hufa75329s3s.pdf Size:292K _fairchild_semi
HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs • 49A, 55V These N-Channel power MOSFETs • Ultra Low On-Resistance, rDS(ON) = 0.024Ω are manufactured using the • Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Available on th
9.1. huf75329d3-s.pdf Size:225K _fairchild_semi
HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the
9.2. hufa75329d3st hufa75329d3 hufa75329d3s.pdf Size:309K _fairchild_semi
HUFA75329D3, HUFA75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - SPICE and SABER Thermal Impedance Mode
9.3. huf75329d3st.pdf Size:660K _fairchild_semi
HUF75329D3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 20 A, 26 mΩ • 20A, 55V These N-Channel power MOSFETs are manufactured using • Simulation Models the innovative UltraFET process. This advanced process - Temperature Compensated PSPICE® and SABER™ technology achieves the lowest possible on-resistance per Models silicon area, resulting in ou
Datasheet: 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , IRF840 , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P , 75339S , 7N50A .
