75329P
MOSFET. Datasheet pdf. Equivalent
Type Designator: 75329P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 49
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TO220
75329P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75329P
Datasheet (PDF)
0.1. Size:292K fairchild semi
hufa75329p3 hufa75329s3s.pdf
HUFA75329G3, HUFA75329P3, HUFA75329S3SData Sheet June 200249A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on th
0.2. Size:252K fairchild semi
huf75329g3 huf75329p3 huf75329s3s.pdf
HUF75329G3, HUF75329P3, HUF75329S3SData Sheet December 200149A, 55V, 0.024 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 49A, 55VThese N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Available on t
9.1. Size:660K fairchild semi
huf75329d3st.pdf
HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured using Simulation Modelsthe innovative UltraFET process. This advanced process - Temperature Compensated PSPICE and SABER technology achieves the lowest possible on-resistance per Modelssilicon area, resulting in ou
9.2. Size:225K fairchild semi
huf75329d3-s.pdf
HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the
9.3. Size:309K fairchild semi
hufa75329d3st hufa75329d3 hufa75329d3s.pdf
HUFA75329D3, HUFA75329D3SData Sheet June 1999 File Number 4426.420A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Mode
9.4. Size:715K onsemi
huf75329d3s.pdf
HUF75329D3SData Sheet October 2013N-Channel UltraFET Power MOSFETFeatures55 V, 20 A, 26 m 20A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on-Modelsresistance per silicon area, resulting in o
Datasheet: 75307D3
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