BUK9610-55A Datasheet. Specs and Replacement

Type Designator: BUK9610-55A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: D2PAK

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BUK9610-55A datasheet

 ..1. Size:327K  philips
 buk9510-55a buk9610-55a.pdf pdf_icon

BUK9610-55A

BUK9510-55A; BUK9610-55A TrenchMOS logic level FET Rev. 01 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology ... See More ⇒

 6.1. Size:52K  philips
 buk9610-30 1.pdf pdf_icon

BUK9610-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9610-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice feat... See More ⇒

 6.2. Size:342K  philips
 buk9510-100b buk9610-100b.pdf pdf_icon

BUK9610-55A

BUK95/9610-100B TrenchMOS logic level FET Rev. 02 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state r... See More ⇒

 6.3. Size:832K  nxp
 buk9610-100b.pdf pdf_icon

BUK9610-55A

BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat... See More ⇒

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Detailed specifications: BUK9606-75B, BUK9607-30B, BUK9608-55A, BUK9608-55B, BUK9609-40B, BUK9609-55A, BUK9609-75A, BUK9610-100B, 12N60, BUK9611-55A, BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A, BUK9616-75B, BUK96180-100A, BUK9618-55A

Keywords - BUK9610-55A MOSFET specs

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