BUK9635-100A Specs and Replacement

Type Designator: BUK9635-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 149 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: D2PAK

BUK9635-100A substitution

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BUK9635-100A datasheet

 ..1. Size:57K  philips
buk9635-100a 1.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. Using trench technology ID Drain current (DC) 40 A the device ... See More ⇒

 ..2. Size:337K  philips
buk9535-100a buk9635-100a.pdf pdf_icon

BUK9635-100A

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t... See More ⇒

 6.1. Size:56K  philips
buk9635-55 2.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 34 A the device fea... See More ⇒

 6.2. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo... See More ⇒

Detailed specifications: BUK9620-100B, BUK9620-55A, BUK9623-75A, BUK9624-55A, BUK9628-100A, BUK9628-55A, BUK9629-100B, BUK962R8-30B, AO3407, BUK9635-55A, BUK963R2-40B, BUK9640-100A, BUK964R2-55B, BUK964R4-40B, BUK9660-100A, BUK9675-100A, BUK9675-55A

Keywords - BUK9635-100A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.