All MOSFET. BUK9635-100A Datasheet

 

BUK9635-100A Datasheet and Replacement


   Type Designator: BUK9635-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 149 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: D2PAK
 

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BUK9635-100A Datasheet (PDF)

 ..1. Size:57K  philips
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BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. Using trench technology ID Drain current (DC) 40 Athe device

 ..2. Size:337K  philips
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BUK9635-100A

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 6.1. Size:56K  philips
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BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea

 6.2. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

Datasheet: BUK9620-100B , BUK9620-55A , BUK9623-75A , BUK9624-55A , BUK9628-100A , BUK9628-55A , BUK9629-100B , BUK962R8-30B , 7N60 , BUK9635-55A , BUK963R2-40B , BUK9640-100A , BUK964R2-55B , BUK964R4-40B , BUK9660-100A , BUK9675-100A , BUK9675-55A .

History: DMP3056LDM | S40N09RN | HGS650N15S | IRF432 | AM6411P | HGD650N15S | IRF5YZ48CM

Keywords - BUK9635-100A MOSFET datasheet

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