All MOSFET. BUK9635-100A Datasheet

 

BUK9635-100A Datasheet and Replacement


   Type Designator: BUK9635-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 149 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: D2PAK
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BUK9635-100A Datasheet (PDF)

 ..1. Size:57K  philips
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BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. Using trench technology ID Drain current (DC) 40 Athe device

 ..2. Size:337K  philips
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BUK9635-100A

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 6.1. Size:56K  philips
buk9635-55 2.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea

 6.2. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK9635-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFH8202

Keywords - BUK9635-100A MOSFET datasheet

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