BUK9635-100A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK9635-100A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 149 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 41 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK9635-100A
BUK9635-100A Datasheet (PDF)
buk9635-100a 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 100 Vmounting. Using trench technology ID Drain current (DC) 40 Athe device
buk9535-100a buk9635-100a.pdf

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
buk9635-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea
buk9535-55a buk9635-55a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo
Другие MOSFET... BUK9620-100B , BUK9620-55A , BUK9623-75A , BUK9624-55A , BUK9628-100A , BUK9628-55A , BUK9629-100B , BUK962R8-30B , 7N60 , BUK9635-55A , BUK963R2-40B , BUK9640-100A , BUK964R2-55B , BUK964R4-40B , BUK9660-100A , BUK9675-100A , BUK9675-55A .
History: AP2864I-A-HF | RJU003N03FRA
History: AP2864I-A-HF | RJU003N03FRA



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