All MOSFET. BUK9635-55A Datasheet

 

BUK9635-55A Datasheet and Replacement


   Type Designator: BUK9635-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: D2PAK
 

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BUK9635-55A Datasheet (PDF)

 ..1. Size:71K  philips
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BUK9635-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

 ..2. Size:834K  nxp
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BUK9635-55A

BUK9635-55AN-channel TrenchMOS logic level FETRev. 2 21 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 ..3. Size:1185K  cn vbsemi
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BUK9635-55A

BUK9635-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS

 4.1. Size:56K  philips
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BUK9635-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea

Datasheet: BUK9620-55A , BUK9623-75A , BUK9624-55A , BUK9628-100A , BUK9628-55A , BUK9629-100B , BUK962R8-30B , BUK9635-100A , 75N75 , BUK963R2-40B , BUK9640-100A , BUK964R2-55B , BUK964R4-40B , BUK9660-100A , BUK9675-100A , BUK9675-55A , BUK98150-55A .

History: HGN035N10AL | OSG65R2KDF | HGI170N10AL | STD9NM60N | DMP2104LP | F35W60C3 | DMN3005LK3

Keywords - BUK9635-55A MOSFET datasheet

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