BUK9635-55A - описание и поиск аналогов

 ..1. Size:71K  philips
 buk9535-55a buk9635-55a.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo

 ..2. Size:834K  nxp
 buk9635-55a.pdf 

BUK9635-55A N-channel TrenchMOS logic level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 ..3. Size:1185K  cn vbsemi
 buk9635-55a.pdf 

BUK9635-55A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS

 4.1. Size:56K  philips
 buk9635-55 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 34 A the device fea

 6.1. Size:57K  philips
 buk9635-100a 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. Using trench technology ID Drain current (DC) 40 A the device

 6.2. Size:337K  philips
 buk9535-100a buk9635-100a.pdf 

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t