All MOSFET. BUK9660-100A Datasheet

 

BUK9660-100A Datasheet and Replacement


   Type Designator: BUK9660-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: D2PAK
 
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BUK9660-100A Datasheet (PDF)

 ..1. Size:913K  nxp
buk9660-100a.pdf pdf_icon

BUK9660-100A

BUK9660-100AN-channel TrenchMOS logic level FETRev. 02 16 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

 8.1. Size:207K  nxp
buk966r5-60e.pdf pdf_icon

BUK9660-100A

BUK966R5-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 9.1. Size:81K  philips
buk9540 buk9640-100a 2.pdf pdf_icon

BUK9660-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 37 Atrench techn

 9.2. Size:50K  philips
buk9614-30 1.pdf pdf_icon

BUK9660-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 69 AThedevice feat

Datasheet: BUK9629-100B , BUK962R8-30B , BUK9635-100A , BUK9635-55A , BUK963R2-40B , BUK9640-100A , BUK964R2-55B , BUK964R4-40B , AON6380 , BUK9675-100A , BUK9675-55A , BUK98150-55A , BUK98180-100A , BUK9832-55A , BUK9875-100A , BUK9880-55A , BUK9907-40ATC .

History: NTMFD4C88N

Keywords - BUK9660-100A MOSFET datasheet

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