75333S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 75333S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 111
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 1300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO263AB
75333S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75333S
Datasheet (PDF)
0.1. Size:233K fairchild semi
hufa75333p3 hufa75333s3s hufa75333s3st.pdf
HUFA75333G3, HUFA75333P3, HUFA75333S3SData Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
0.2. Size:331K fairchild semi
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf
HUF75333G3, HUF75333P3, HUF75333S3S,HUF75333S3Data Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impeda
Datasheet: 75321D3
, 75321P
, 75321S
, 75329G
, 75329P
, 75329S
, 75333G
, 75333P
, IRF640
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, 75339P
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, ALD1101APA
, ALD1101BPA
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.