75333S Datasheet and Replacement
Type Designator: 75333S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO263AB
75333S substitution
75333S Datasheet (PDF)
hufa75333p3 hufa75333s3s hufa75333s3st.pdf
HUFA75333G3, HUFA75333P3, HUFA75333S3SData Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf
HUF75333G3, HUF75333P3, HUF75333S3S,HUF75333S3Data Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impeda
Datasheet: 75321D3 , 75321P , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , IRF640 , 75339G , 75339P , 75339S , 7N50A , A498 , ALD1101APA , ALD1101BPA , ALD1101DA .
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