BUK9907-55ATE Datasheet and Replacement
Type Designator: BUK9907-55ATE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO2205
BUK9907-55ATE substitution
BUK9907-55ATE Datasheet (PDF)
buk9107-55ate buk9907-55ate.pdf
BUK91/9907-55ATETrenchPLUS logic level FETRev. 01 7 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9107-55ATE in
buk9907-40atc.pdf
BUK9907-40ATCTrenchPLUS logic level FETRev. 01 28 January 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9907-40A
Datasheet: BUK9675-100A , BUK9675-55A , BUK98150-55A , BUK98180-100A , BUK9832-55A , BUK9875-100A , BUK9880-55A , BUK9907-40ATC , 7N60 , BUK9C07-65BIT , BUK9C10-55BIT , BUK9C10-65BIT , BUK9E04-30B , BUK9E04-40A , BUK9E06-55A , BUK9E06-55B , BUK9E08-55B .
History: UT100N03G-TQ2-T | UT100N03L-TQ2-T
Keywords - BUK9907-55ATE MOSFET datasheet
BUK9907-55ATE cross reference
BUK9907-55ATE equivalent finder
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BUK9907-55ATE substitution
BUK9907-55ATE replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: UT100N03G-TQ2-T | UT100N03L-TQ2-T
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