All MOSFET. BUK9907-55ATE Datasheet

 

BUK9907-55ATE Datasheet and Replacement


   Type Designator: BUK9907-55ATE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO2205
 

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BUK9907-55ATE Datasheet (PDF)

 ..1. Size:376K  philips
 buk9107-55ate buk9907-55ate.pdf pdf_icon

BUK9907-55ATE

BUK91/9907-55ATETrenchPLUS logic level FETRev. 01 7 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9107-55ATE in

 6.1. Size:355K  philips
 buk9907-40atc.pdf pdf_icon

BUK9907-55ATE

BUK9907-40ATCTrenchPLUS logic level FETRev. 01 28 January 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9907-40A

Datasheet: BUK9675-100A , BUK9675-55A , BUK98150-55A , BUK98180-100A , BUK9832-55A , BUK9875-100A , BUK9880-55A , BUK9907-40ATC , MMIS60R580P , BUK9C07-65BIT , BUK9C10-55BIT , BUK9C10-65BIT , BUK9E04-30B , BUK9E04-40A , BUK9E06-55A , BUK9E06-55B , BUK9E08-55B .

History: APT3580BN | RSR030N06

Keywords - BUK9907-55ATE MOSFET datasheet

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