BUK9E06-55B Datasheet. Specs and Replacement

Type Designator: BUK9E06-55B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: I2PAK

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BUK9E06-55B datasheet

 ..1. Size:115K  philips
 buk95 buk96 buk9e06-55b.pdf pdf_icon

BUK9E06-55B

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compli... See More ⇒

 4.1. Size:199K  philips
 buk9e06-55a.pdf pdf_icon

BUK9E06-55B

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 8.1. Size:358K  philips
 buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E06-55B

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒

 8.2. Size:339K  philips
 buk9e08-55b.pdf pdf_icon

BUK9E06-55B

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

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Detailed specifications: BUK9907-40ATC, BUK9907-55ATE, BUK9C07-65BIT, BUK9C10-55BIT, BUK9C10-65BIT, BUK9E04-30B, BUK9E04-40A, BUK9E06-55A, IRF520, BUK9E08-55B, BUK9E3R2-40B, BUK9E4R4-40B, BUK9MFF-65PSS, BUK9MGP-55PTS, BUK9MHH-65PNN, BUK9MJJ-55PSS, BUK9MJJ-55PTT

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