75339G Datasheet and Replacement
Type Designator: 75339G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 124 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO247
75339G substitution
75339G Datasheet (PDF)
hufa75339g3 hufa75339s3s hufa75339s3st.pdf

HUFA75339G3, HUFA75339P3, HUFA75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
huf75339g3 huf75339p3 huf75339s3s.pdf

HUF75339G3, HUF75339P3, HUF75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
hufa75339g3.pdf

Isc N-Channel MOSFET Transistor HUFA75339G3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: 75321P , 75321S , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , IRFZ44 , 75339P , 75339S , 7N50A , A498 , ALD1101APA , ALD1101BPA , ALD1101DA , ALD1101MA .
History: AOTF10N65 | IXFN200N07
Keywords - 75339G MOSFET datasheet
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History: AOTF10N65 | IXFN200N07



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