75339G Specs and Replacement
Type Designator: 75339G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 124 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 2000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO247
75339G substitution
- MOSFET ⓘ Cross-Reference Search
75339G datasheet
hufa75339g3 hufa75339s3s hufa75339s3st.pdf
HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models... See More ⇒
huf75339g3 huf75339p3 huf75339s3s.pdf
HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models ... See More ⇒
hufa75339g3.pdf
Isc N-Channel MOSFET Transistor HUFA75339G3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: 75321P, 75321S, 75329G, 75329P, 75329S, 75333G, 75333P, 75333S, IRFZ44, 75339P, 75339S, 7N50A, A498, ALD1101APA, ALD1101BPA, ALD1101DA, ALD1101MA
Keywords - 75339G MOSFET specs
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