BUK9Y14-40B PDF and Equivalents Search

 

BUK9Y14-40B Specs and Replacement


   Type Designator: BUK9Y14-40B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: LFPAK
 

 BUK9Y14-40B substitution

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BUK9Y14-40B datasheet

 ..1. Size:189K  philips
buk9y14-40b.pdf pdf_icon

BUK9Y14-40B

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automoti... See More ⇒

 ..2. Size:735K  nxp
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BUK9Y14-40B

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut... See More ⇒

 6.1. Size:290K  nxp
buk9y14-80e.pdf pdf_icon

BUK9Y14-40B

BUK9Y14-80E N-channel 80 V,15 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit... See More ⇒

 8.1. Size:89K  philips
buk9y11-30b.pdf pdf_icon

BUK9Y14-40B

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒

Detailed specifications: BUK9MRR-55PGG , BUK9MRR-65PKK , BUK9MTT-65PBB , BUK9Y07-30B , BUK9Y09-40B , BUK9Y104-100B , BUK9Y11-30B , BUK9Y12-55B , IRFB4110 , BUK9Y19-55B , BUK9Y19-75B , BUK9Y22-30B , BUK9Y27-40B , BUK9Y30-75B , BUK9Y34-100B , BUK9Y40-55B , BUK9Y53-100B .

Keywords - BUK9Y14-40B MOSFET specs

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