PHB110NQ08T Specs and Replacement

Type Designator: PHB110NQ08T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: D2PAK

PHB110NQ08T substitution

- MOSFET ⓘ Cross-Reference Search

 

PHB110NQ08T datasheet

 ..1. Size:89K  philips
php110nq08t phb110nq08t.pdf pdf_icon

PHB110NQ08T

PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D... See More ⇒

 ..2. Size:674K  nxp
phb110nq08t.pdf pdf_icon

PHB110NQ08T

PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒

 4.1. Size:89K  philips
phb110nq08lt php110nq08lt.pdf pdf_icon

PHB110NQ08T

PHP/PHB110NQ08LT N-channel TrenchMOS logic level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies ... See More ⇒

 5.1. Size:209K  philips
phb110nq06lt.pdf pdf_icon

PHB110NQ08T

PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features ... See More ⇒

Detailed specifications: NX3008PBK, NX3008PBKS, NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L, 4435, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, PHB33NQ20T

Keywords - PHB110NQ08T MOSFET specs

 PHB110NQ08T cross reference

 PHB110NQ08T equivalent finder

 PHB110NQ08T pdf lookup

 PHB110NQ08T substitution

 PHB110NQ08T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.