Справочник MOSFET. PHB110NQ08T

 

PHB110NQ08T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PHB110NQ08T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для PHB110NQ08T

   - подбор ⓘ MOSFET транзистора по параметрам

 

PHB110NQ08T Datasheet (PDF)

 ..1. Size:89K  philips
php110nq08t phb110nq08t.pdfpdf_icon

PHB110NQ08T

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

 ..2. Size:674K  nxp
phb110nq08t.pdfpdf_icon

PHB110NQ08T

PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 4.1. Size:89K  philips
phb110nq08lt php110nq08lt.pdfpdf_icon

PHB110NQ08T

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

 5.1. Size:209K  philips
phb110nq06lt.pdfpdf_icon

PHB110NQ08T

PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Другие MOSFET... NX3008PBK , NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , PH2520U , PH2925U , PH3120L , 2SK3568 , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T .

History: IXTH22N50P | AM4922N

 

 
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