PHB47NQ10T Specs and Replacement

Type Designator: PHB47NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: D2PAK

PHB47NQ10T substitution

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PHB47NQ10T datasheet

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PHB47NQ10T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Detailed specifications: PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, IRF530, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT, PHD20N06T, PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT

Keywords - PHB47NQ10T MOSFET specs

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