PHD20N06T Specs and Replacement

Type Designator: PHD20N06T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: DPAK

PHD20N06T substitution

- MOSFET ⓘ Cross-Reference Search

 

PHD20N06T datasheet

 ..1. Size:855K  nxp
 phd20n06t.pdf pdf_icon

PHD20N06T

PHD20N06T N-channel TrenchMOS standard level FET Rev. 02 1 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒

Detailed specifications: PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT, IRFP450, PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT

Keywords - PHD20N06T MOSFET specs

 PHD20N06T cross reference

 PHD20N06T equivalent finder

 PHD20N06T pdf lookup

 PHD20N06T substitution

 PHD20N06T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.