All MOSFET. PHD20N06T Datasheet

 

PHD20N06T Datasheet and Replacement


   Type Designator: PHD20N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: DPAK
 

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PHD20N06T Datasheet (PDF)

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PHD20N06T

PHD20N06TN-channel TrenchMOS standard level FETRev. 02 1 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

Datasheet: PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , IRF1407 , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT .

History: TPC70R950C | 2SK578 | FMV16N60E | CS5N65A3 | TPCA8008-H | NCE70N900I | GSM6424

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