All MOSFET. PHD9NQ20T Datasheet

 

PHD9NQ20T MOSFET. Datasheet pdf. Equivalent

Type Designator: PHD9NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8.7 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: DPAK

PHD9NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD9NQ20T Datasheet (PDF)

1.1. phb9nq20t phd9nq20t php9nq20t 2.pdf Size:115K _philips

PHD9NQ20T
PHD9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 8.7 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using

Datasheet: PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , 2SK3568 , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T .

 

 
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