All MOSFET. PHD9NQ20T Datasheet

 

PHD9NQ20T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHD9NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: DPAK

 PHD9NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHD9NQ20T Datasheet (PDF)

 ..1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf

PHD9NQ20T PHD9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using

 ..2. Size:764K  nxp
 phd9nq20t.pdf

PHD9NQ20T PHD9NQ20T

PHD9NQ20TN-channel TrenchMOS standard level FETRev. 03 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FTK138D | IXFC12N80P

 

 
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