PHD9NQ20T Datasheet and Replacement
Type Designator: PHD9NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: DPAK
PHD9NQ20T substitution
PHD9NQ20T Datasheet (PDF)
phb9nq20t phd9nq20t php9nq20t 2.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using
phd9nq20t.pdf

PHD9NQ20TN-channel TrenchMOS standard level FETRev. 03 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
Datasheet: PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , 2SK3568 , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T .
History: 2SK3992-ZK | L2N7002M3T5G | TA17632 | 2SJ465 | JMSH1010AE | HY4306W | ZVP0545GTA
Keywords - PHD9NQ20T MOSFET datasheet
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History: 2SK3992-ZK | L2N7002M3T5G | TA17632 | 2SJ465 | JMSH1010AE | HY4306W | ZVP0545GTA



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