All MOSFET. PHK12NQ10T Datasheet

 

PHK12NQ10T Datasheet and Replacement


   Type Designator: PHK12NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SO8
 

 PHK12NQ10T substitution

   - MOSFET ⓘ Cross-Reference Search

 

PHK12NQ10T Datasheet (PDF)

 7.1. Size:823K  cn vbsemi
 phk12nq03l.pdf pdf_icon

PHK12NQ10T

PHK12NQ03Lwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , 5N65 , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT .

History: IPP60R950C6 | AP3990I-HF

Keywords - PHK12NQ10T MOSFET datasheet

 PHK12NQ10T cross reference
 PHK12NQ10T equivalent finder
 PHK12NQ10T lookup
 PHK12NQ10T substitution
 PHK12NQ10T replacement

 

 
Back to Top

 


 
.