PHK12NQ10T Specs and Replacement
Type Designator: PHK12NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
PHK12NQ10T substitution
- MOSFET ⓘ Cross-Reference Search
PHK12NQ10T datasheet
phk12nq03l.pdf
PHK12NQ03L www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒
Detailed specifications: PHD101NQ03LT, PHD20N06T, PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, 2SK3568, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT
Keywords - PHK12NQ10T MOSFET specs
PHK12NQ10T cross reference
PHK12NQ10T equivalent finder
PHK12NQ10T pdf lookup
PHK12NQ10T substitution
PHK12NQ10T replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
