All MOSFET. PHKD13N03LT Datasheet

 

PHKD13N03LT Datasheet and Replacement


   Type Designator: PHKD13N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10.4 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8
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PHKD13N03LT Datasheet (PDF)

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PHKD13N03LT

PHKD13N03LTDual N-channel TrenchMOS logic level FETRev. 03 27 April 2010 Product data sheet1. Product profile1.1 General descriptionDual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2

Datasheet: PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , AON6380 , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T .

History: 2SJ473-01S | IRF7759L2TR1PBF

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