PHKD13N03LT Specs and Replacement

Type Designator: PHKD13N03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SO8

PHKD13N03LT substitution

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PHKD13N03LT datasheet

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 phkd13n03lt.pdf pdf_icon

PHKD13N03LT

PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 03 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2... See More ⇒

Detailed specifications: PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, 18N50, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, PHP20N06T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.