PHKD13N03LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHKD13N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 10.4 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO8
PHKD13N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHKD13N03LT Datasheet (PDF)
phkd13n03lt.pdf
PHKD13N03LTDual N-channel TrenchMOS logic level FETRev. 03 27 April 2010 Product data sheet1. Product profile1.1 General descriptionDual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PHP78NQ03LT
History: PHP78NQ03LT
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918