PHP23NQ11T Specs and Replacement

Type Designator: PHP23NQ11T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO220AB

PHP23NQ11T substitution

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PHP23NQ11T datasheet

 ..1. Size:211K  philips
php23nq11t.pdf pdf_icon

PHP23NQ11T

PHP23NQ11T N-channel TrenchMOS standard level FET Rev. 02 25 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒

 ..2. Size:328K  nxp
php23nq11t.pdf pdf_icon

PHP23NQ11T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:101K  philips
phb23nq15t php23nq15t 1.pdf pdf_icon

PHP23NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ15T, PHB23NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic enve... See More ⇒

 6.2. Size:102K  philips
phb23nq10t phd23nq10t php23nq10t 1.pdf pdf_icon

PHP23NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

Detailed specifications: PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225, IRFB31N20D, PHP27NQ11T, PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T, PHP45NQ10T, PHP45NQ11T, PHP79NQ08LT

Keywords - PHP23NQ11T MOSFET specs

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 PHP23NQ11T replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.