PHP23NQ11T Specs and Replacement
Type Designator: PHP23NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220AB
PHP23NQ11T substitution
- MOSFET ⓘ Cross-Reference Search
PHP23NQ11T datasheet
php23nq11t.pdf
PHP23NQ11T N-channel TrenchMOS standard level FET Rev. 02 25 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒
php23nq11t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
phb23nq15t php23nq15t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ15T, PHB23NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic enve... See More ⇒
phb23nq10t phd23nq10t php23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒
Detailed specifications: PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225, IRFB31N20D, PHP27NQ11T, PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T, PHP45NQ10T, PHP45NQ11T, PHP79NQ08LT
Keywords - PHP23NQ11T MOSFET specs
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