All MOSFET. PHP27NQ11T Datasheet

 

PHP27NQ11T Datasheet and Replacement


   Type Designator: PHP27NQ11T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 27.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220AB
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PHP27NQ11T Datasheet (PDF)

 ..1. Size:212K  philips
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PHP27NQ11T

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

 ..2. Size:769K  nxp
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PHP27NQ11T

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

 6.1. Size:118K  philips
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PHP27NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 AgRDS(ON) 50 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

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