PHP27NQ11T Datasheet and Replacement
Type Designator: PHP27NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220AB
PHP27NQ11T substitution
PHP27NQ11T Datasheet (PDF)
php27nq11t.pdf

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu
php27nq11t.pdf

PHP27NQ11TN-channel TrenchMOS standard level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu
phb27nq10t phd27nq10t php27nq10t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 AgRDS(ON) 50 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
Datasheet: PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , IRFZ48N , PHP28NQ15T , PHP29N08T , PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T .
History: APT4080BN | 25N10G-TM3-T
Keywords - PHP27NQ11T MOSFET datasheet
PHP27NQ11T cross reference
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History: APT4080BN | 25N10G-TM3-T



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