All MOSFET. PHP29N08T Datasheet

 

PHP29N08T Datasheet and Replacement


   Type Designator: PHP29N08T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220AB
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PHP29N08T Datasheet (PDF)

 ..1. Size:262K  philips
 php29n08t phb29n08t-01.pdf pdf_icon

PHP29N08T

PHP/PHB29N08TTrenchMOS standard level FETRev. 01 29 May 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP29N08T in SOT78 (TO-220AB)PHB29N08T in SOT404 (D2-PAK).2. Features High noise immunity Low on-state resistance.3. Applications Industrial motor cont

 ..2. Size:675K  nxp
 php29n08t.pdf pdf_icon

PHP29N08T

PHP29N08TN-channel TrenchMOS standard level FETRev. 02 12 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

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