PHP29N08T Datasheet and Replacement
Type Designator: PHP29N08T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220AB
PHP29N08T substitution
PHP29N08T Datasheet (PDF)
php29n08t phb29n08t-01.pdf

PHP/PHB29N08TTrenchMOS standard level FETRev. 01 29 May 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP29N08T in SOT78 (TO-220AB)PHB29N08T in SOT404 (D2-PAK).2. Features High noise immunity Low on-state resistance.3. Applications Industrial motor cont
php29n08t.pdf

PHP29N08TN-channel TrenchMOS standard level FETRev. 02 12 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu
Datasheet: PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T , PHP28NQ15T , MMIS60R580P , PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T .
History: SFF150C | CSD88539ND | IXFH36N60P | QM4014D | FS16SM-6 | BUK9Y1R6-40H
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History: SFF150C | CSD88539ND | IXFH36N60P | QM4014D | FS16SM-6 | BUK9Y1R6-40H



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