All MOSFET. PMF3800SN Datasheet

 

PMF3800SN Datasheet and Replacement


   Type Designator: PMF3800SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 0.26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: SC70
 

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PMF3800SN Datasheet (PDF)

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PMF3800SN

PMF3800SNN-channel TrenchMOS standard level FETRev. 03 11 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Datasheet: PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , IRFZ44N , PMF400UN , PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN .

History: H04N60F | BUZ83 | NCE60NF055F | SFF240J | WMN30N80M3 | 2SK1008-01

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