PMF3800SN Specs and Replacement

Type Designator: PMF3800SN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 0.26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: SC70

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PMF3800SN datasheet

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PMF3800SN

PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒

Detailed specifications: PHT6NQ10T, PHU97NQ03LT, PMBF170, PMDPB65UP, PMF170XP, PMF280UN, PMF290XN, PMF370XN, IRFZ44N, PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN

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