PMF3800SN Datasheet and Replacement
Type Designator: PMF3800SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: SC70
PMF3800SN substitution
PMF3800SN Datasheet (PDF)
pmf3800sn.pdf

PMF3800SNN-channel TrenchMOS standard level FETRev. 03 11 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
Datasheet: PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , IRFZ44N , PMF400UN , PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN .
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