All MOSFET. PMFPB6545UP Datasheet

 

PMFPB6545UP Datasheet and Replacement


   Type Designator: PMFPB6545UP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT1118
 

 PMFPB6545UP substitution

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PMFPB6545UP Datasheet (PDF)

 ..1. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB6545UP

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 7.1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB6545UP

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB6545UP

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 9.2. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB6545UP

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

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Datasheet: PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP , 20N60 , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN .

History: 2SK3325-ZJ | JCS160N08 | 2SK3325-S | JCS1SN60RC | IRFH8334PBF-1 | 2SK2936 | STW30NM60ND

Keywords - PMFPB6545UP MOSFET datasheet

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