PMFPB6545UP Specs and Replacement

Type Designator: PMFPB6545UP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT1118

PMFPB6545UP substitution

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PMFPB6545UP datasheet

 ..1. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB6545UP

PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Rev. 2 4 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2... See More ⇒

 7.1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB6545UP

PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2... See More ⇒

 9.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB6545UP

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount... See More ⇒

 9.2. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB6545UP

PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mount... See More ⇒

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Detailed specifications: PMF170XP, PMF280UN, PMF290XN, PMF370XN, PMF3800SN, PMF400UN, PMF780SN, PMFPB6532UP, 20N60, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN, PMGD400UN, PMGD780SN, PMGD8000LN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.