PMFPB6545UP - аналоги и даташиты транзистора

 

PMFPB6545UP - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PMFPB6545UP
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SOT1118
 

 Аналог (замена) для PMFPB6545UP

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMFPB6545UP Datasheet (PDF)

 ..1. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB6545UP

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 7.1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB6545UP

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB6545UP

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 9.2. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB6545UP

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP , IRF840 , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN .

History: IXTT10P60 | IXTT110N10P

 

 
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