PMN25EN Datasheet and Replacement
Type Designator: PMN25EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TSOP6
PMN25EN substitution
PMN25EN Datasheet (PDF)
pmn25ene.pdf

PMN25ENE30 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg
pmn25enea.pdf

PMN25ENEA30 V, N-channel Trench MOSFET14 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E
Datasheet: PMGD8000LN , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , IRFB4110 , PMN25UN , PMN27UN , PMN27UP , PMN28UN , PMN34LN , PMN34UN , PMN34UP , PMN35EN .
History: SI7192DP | MMIX1F360N15T2 | IXTH60N15 | NP82N04NUG | FCH023N65S3 | 2P979V | 2SK3501-01
Keywords - PMN25EN MOSFET datasheet
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History: SI7192DP | MMIX1F360N15T2 | IXTH60N15 | NP82N04NUG | FCH023N65S3 | 2P979V | 2SK3501-01



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