All MOSFET. PMN25UN Datasheet

 

PMN25UN Datasheet and Replacement


   Type Designator: PMN25UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP6
 

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PMN25UN Datasheet (PDF)

 9.1. Size:260K  nxp
 pmn25ene.pdf pdf_icon

PMN25UN

PMN25ENE30 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg

 9.2. Size:260K  nxp
 pmn25enea.pdf pdf_icon

PMN25UN

PMN25ENEA30 V, N-channel Trench MOSFET14 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E

Datasheet: PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , IRFP250N , PMN27UN , PMN27UP , PMN28UN , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN .

History: AM4490NE | HTD200P03 | SQ2361EES | 2N7002NXBK | TSM2312CX | BSC050N03MS | FQD6P25TM

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