PMN25UN Specs and Replacement

Type Designator: PMN25UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSOP6

PMN25UN substitution

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PMN25UN datasheet

 9.1. Size:260K  nxp
 pmn25ene.pdf pdf_icon

PMN25UN

PMN25ENE 30 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg... See More ⇒

 9.2. Size:260K  nxp
 pmn25enea.pdf pdf_icon

PMN25UN

PMN25ENEA 30 V, N-channel Trench MOSFET 14 March 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E... See More ⇒

Detailed specifications: PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN, PMN23UN, PMN25EN, IRFB4115, PMN27UN, PMN27UP, PMN28UN, PMN34LN, PMN34UN, PMN34UP, PMN35EN, PMN38EN

Keywords - PMN25UN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs