PMN27UP
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN27UP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.54
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95
V
|Id|ⓘ - Maximum Drain Current: 5.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
TSOP6
PMN27UP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN27UP
Datasheet (PDF)
..1. Size:1566K nxp
pmn27up.pdf
PMN27UP20 V, 5.7 A P-channel Trench MOSFETRev. 1 13 July 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switch
9.1. Size:275K nxp
pmn27xpea.pdf
PMN27XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. A
9.2. Size:199K nxp
pmn27xpe.pdf
PMN27XPE20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.
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