All MOSFET. PMN27UP Datasheet

 

PMN27UP Datasheet and Replacement


   Type Designator: PMN27UP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSOP6
 

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PMN27UP Datasheet (PDF)

 ..1. Size:1566K  nxp
 pmn27up.pdf pdf_icon

PMN27UP

PMN27UP20 V, 5.7 A P-channel Trench MOSFETRev. 1 13 July 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switch

 9.1. Size:275K  nxp
 pmn27xpea.pdf pdf_icon

PMN27UP

PMN27XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. A

 9.2. Size:199K  nxp
 pmn27xpe.pdf pdf_icon

PMN27UP

PMN27XPE20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.

Datasheet: PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN , P55NF06 , PMN28UN , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN , PMN40LN , PMN45EN .

History: QM3015D | AP4433GM-HF

Keywords - PMN27UP MOSFET datasheet

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