All MOSFET. PMN28UN Datasheet

 

PMN28UN Datasheet and Replacement


   Type Designator: PMN28UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TSOP6
 

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PMN28UN Datasheet (PDF)

 0.1. Size:278K  nxp
 pmn28une.pdf pdf_icon

PMN28UN

PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge

 9.1. Size:260K  nxp
 pmn280enea.pdf pdf_icon

PMN28UN

PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology

Datasheet: PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN , PMN27UP , 2SK3878 , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN , PMN40LN , PMN45EN , PMN48XP .

History: OSG65R290AF | WMK90R360S | RUH1H130S | SE80100GA | SWI1N55D | OSG65R290KF

Keywords - PMN28UN MOSFET datasheet

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