PMN28UN Datasheet and Replacement
Type Designator: PMN28UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TSOP6
PMN28UN substitution
PMN28UN Datasheet (PDF)
pmn28une.pdf

PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge
pmn280enea.pdf

PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
Datasheet: PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN , PMN27UP , IRF630 , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN , PMN40LN , PMN45EN , PMN48XP .
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