PMN55LN Datasheet and Replacement
Type Designator: PMN55LN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TSOP6
PMN55LN substitution
PMN55LN Datasheet (PDF)
pmn55enea.pdf

PMN55ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E
pmn55ene.pdf

PMN55ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch
Datasheet: PMN34UN , PMN34UP , PMN35EN , PMN38EN , PMN40LN , PMN45EN , PMN48XP , PMN49EN , IRF4905 , PMR280UN , PMR290XN , PMR370XN , PMR400UN , PMR780SN , PMT21EN , PMT29EN , PMV117EN .
History: MSF14N60
Keywords - PMN55LN MOSFET datasheet
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History: MSF14N60



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