PMN55LN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN55LN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TSOP6
PMN55LN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN55LN Datasheet (PDF)
pmn55enea.pdf
PMN55ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E
pmn55ene.pdf
PMN55ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
