All MOSFET. PMN55LN Datasheet

 

PMN55LN Datasheet and Replacement


   Type Designator: PMN55LN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TSOP6
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PMN55LN Datasheet (PDF)

 9.1. Size:265K  nxp
 pmn55enea.pdf pdf_icon

PMN55LN

PMN55ENEA60 V, N-channel Trench MOSFET26 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E

 9.2. Size:271K  nxp
 pmn55ene.pdf pdf_icon

PMN55LN

PMN55ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch

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History: ALD1103DB | TK7P65W | CHM85A3PAGP | SQ9407EY-T1 | SFFX054Z

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