PMN55LN Specs and Replacement

Type Designator: PMN55LN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TSOP6

PMN55LN substitution

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PMN55LN datasheet

 9.1. Size:265K  nxp
 pmn55enea.pdf pdf_icon

PMN55LN

PMN55ENEA 60 V, N-channel Trench MOSFET 26 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E... See More ⇒

 9.2. Size:271K  nxp
 pmn55ene.pdf pdf_icon

PMN55LN

PMN55ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disch... See More ⇒

Detailed specifications: PMN34UN, PMN34UP, PMN35EN, PMN38EN, PMN40LN, PMN45EN, PMN48XP, PMN49EN, IRF4905, PMR280UN, PMR290XN, PMR370XN, PMR400UN, PMR780SN, PMT21EN, PMT29EN, PMV117EN

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