PMR290XN Specs and Replacement

Type Designator: PMR290XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.97 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SC75

PMR290XN substitution

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PMR290XN datasheet

 8.1. Size:183K  nxp
pmr290une.pdf pdf_icon

PMR290XN

PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trenc... See More ⇒

Detailed specifications: PMN35EN, PMN38EN, PMN40LN, PMN45EN, PMN48XP, PMN49EN, PMN55LN, PMR280UN, AO3401, PMR370XN, PMR400UN, PMR780SN, PMT21EN, PMT29EN, PMV117EN, PMV160UP, PMV16UN

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