PMV60EN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV60EN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
TO236AB
PMV60EN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV60EN
Datasheet (PDF)
..1. Size:238K philips
pmv60en.pdf
PMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1
..2. Size:96K tysemi
pmv60en.pdf
Product specificationPMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High s
0.1. Size:268K nxp
pmv60enea.pdf
PMV60ENEA40 V, N-channel Trench MOSFET9 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele
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