PSMN015-100B Specs and Replacement

Type Designator: PSMN015-100B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: D2PAK

PSMN015-100B substitution

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PSMN015-100B datasheet

 3.1. Size:101K  philips
psmn015-100p 100b.pdf pdf_icon

PSMN015-100B

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-... See More ⇒

 3.2. Size:153K  philips
psmn015-100 series hg 3.pdf pdf_icon

PSMN015-100B

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma... See More ⇒

 3.3. Size:707K  nxp
psmn015-100p.pdf pdf_icon

PSMN015-100B

PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a... See More ⇒

 3.4. Size:720K  nxp
psmn015-100yl.pdf pdf_icon

PSMN015-100B

PSMN015-100YL N-channel 100 V, 15 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon... See More ⇒

Detailed specifications: PSMN013-100BS, PSMN013-100ES, PSMN013-100PS, PSMN013-30LL, PSMN013-30YLC, PSMN013-80YS, PSMN014-40YS, PSMN014-60LS, IRLB3034, PSMN015-100P, PSMN015-110P, PSMN015-60PS, PSMN016-100PS, PSMN016-100XS, PSMN016-100YS, PSMN017-30LL, PSMN017-60YS

Keywords - PSMN015-100B MOSFET specs

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