PSMN015-100B - аналоги, даташиты, параметры транзистора

PSMN015-100B Datasheet (PDF)

3.1. Size:101K philips
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PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-

3.2. Size:153K philips
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DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

3.3. Size:707K nxp
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PSMN015-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 06 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

3.4. Size:720K nxp
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PSMN015-100YLN-channel 100 V, 15 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

Другие MOSFET... PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , 60N06 , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS .