PSMN017-60YS
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN017-60YS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 44
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0157
Ohm
Package:
LFPAK
PSMN017-60YS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN017-60YS
Datasheet (PDF)
..1. Size:241K philips
psmn017-60ys.pdf 
PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
..2. Size:806K nxp
psmn017-60ys.pdf
PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS
6.1. Size:397K philips
psmn017-30ll.pdf
PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
6.2. Size:194K nxp
psmn017-30pl.pdf
PSMN017-30PLN-channel 30 V 17 m logic level MOSFET in TO220Rev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
6.3. Size:800K nxp
psmn017-80ps.pdf
PSMN017-80PSN-channel 80 V 17 m standard level MOSFET in TO220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic
6.4. Size:205K nxp
psmn017-80bs.pdf
PSMN017-80BSN-channel 80 V 17 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
6.5. Size:188K nxp
psmn017-30el.pdf
PSMN017-30ELN-channel 30 V 17 m logic level MOSFET in I2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
6.6. Size:193K nxp
psmn017-30bl.pdf
PSMN017-30BLN-channel 30 V 17 m logic level MOSFET in D2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
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