All MOSFET. PSMN070-200P Datasheet

 

PSMN070-200P MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN070-200P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 77 nC

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220AB

PSMN070-200P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN070-200P Datasheet (PDF)

1.1. psmn070-200 series hg 3.pdf Size:149K _philips2

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN070-200B; PSMN070-200P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID

4.1. psmn075-100mse.pdf Size:357K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling the next generation of Power- over-Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot

 5.1. psmn034-100bs.pdf Size:233K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficien

5.2. psmn004-36b.pdf Size:294K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applicat

 5.3. psmn0r9-30yld.pdf Size:290K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 November 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFE

5.4. psmn017-30el.pdf Size:188K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN017-30EL N-channel 30 V 17 mΩ logic level MOSFET in I2PAK Rev. 2 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due t

 5.5. psmn0r7-25yld.pdf Size:230K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN0R7-25YLD N-channel 25 V, 0.7 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 15 April 2015 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with

5.6. psmn008-75p.pdf Size:106K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN008-75P/75B TrenchMOS™ standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications D

5.7. psmn013-100xs.pdf Size:205K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN013-100XS N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefit

5.8. psmn023-40ylc.pdf Size:216K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN023-40YLC N-channel 40 V 23mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High rel

5.9. psmn005-55b psmn005-55p.pdf Size:119K _update_mosfet

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Very low on-state resistance • Fast swit

5.10. psmn011-60ml.pdf Size:338K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN011-60ML N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction loss

5.11. psmn022-30bl.pdf Size:223K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN022-30BL N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK Rev. 1 — 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency du

5.12. psmn027-100bs.pdf Size:205K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN027-100BS N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

5.13. psmn040-200w.pdf Size:87K _update_mosfet

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 50 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

5.14. psmn003-30b psmn003-30p.pdf Size:291K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 — 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applic

5.15. psmn041-80yl.pdf Size:352K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due

5.16. psmn009-100w.pdf Size:92K _update_mosfet

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

5.17. psmn020-150w.pdf Size:92K _update_mosfet

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 150 V • Fast switching • Low thermal resistance ID = 73 A g RDS(ON) ≤ 20 mΩ s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Phil

5.18. psmn013-30mlc.pdf Size:365K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN013-30MLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

5.19. psmn010-25ylc.pdf Size:233K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN010-25YLC N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

5.20. psmn011-60ms.pdf Size:342K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conductio

5.21. psmn050-80bs.pdf Size:230K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN050-80BS N-channel 80 V 46 mΩ standard level MOSFET in D2PAK Rev. 1 — 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency

5.22. psmn038-100yl.pdf Size:320K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency

5.23. psmn017-30pl.pdf Size:194K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN017-30PL N-channel 30 V 17 mΩ logic level MOSFET in TO220 Rev. 2 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due t

5.24. psmn017-80bs.pdf Size:205K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN017-80BS N-channel 80 V 17 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency

5.25. psmn020-30mlc.pdf Size:274K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits •

5.26. psmn012-80bs.pdf Size:204K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN012-80BS N-channel 80 V 11 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency

5.27. psmn040-100mse.pdf Size:347K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN040-100MSE N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourci

5.28. psmn011-30ylc.pdf Size:226K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN011-30YLC N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

5.29. psmn012-25ylc.pdf Size:231K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN012-25YLC N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene

5.30. psmn013-100yse.pdf Size:283K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot- swap" controllers - robust enough to withstand substantial inrush currents during turn on, whil

5.31. psmn027-100xs.pdf Size:216K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN027-100XS N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

5.32. psmn005-75p.pdf Size:271K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi

5.33. psmn016-100bs.pdf Size:202K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN016-100BS N-channel 100V 16 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficienc

5.34. psmn010-55d.pdf Size:100K _update_mosfet

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Very low on-state resistance • Fast switching ID = 75 A • Logic level compatible RDS(ON) ≤ 10.5 mΩ (VGS = 10 V) g RDS(ON) ≤ 12 mΩ (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK)

5.35. psmn015-60bs.pdf Size:201K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN015-60BS N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficien

5.36. psmn004-55w.pdf Size:96K _update_mosfet

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Very low on-state resistance • Fast switching ID = 100 A • Low thermal resistance • Logic level compatible RDS(ON) ≤ 4.2 mΩ (VGS = 10 V) g RDS(ON) ≤ 4.5 mΩ (VGS = 5 V) s RDS(ON) ≤ 5

5.37. psmn017-30bl.pdf Size:193K _update_mosfet

PSMN070-200P
PSMN070-200P

PSMN017-30BL N-channel 30 V 17 mΩ logic level MOSFET in D2PAK Rev. 2 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due t

5.38. psmn005-25d.pdf Size:148K _update_mosfet

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 25 V • Very low on-state resistance • Fast switching ID = 75 A • Logic

5.39. psmn059-150y.pdf Size:196K _philips2

PSMN070-200P
PSMN070-200P

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati

5.40. psmn057-200p.pdf Size:172K _philips2

PSMN070-200P
PSMN070-200P

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicat

5.41. psmn023-80ls.pdf Size:374K _philips2

PSMN070-200P
PSMN070-200P

PSMN023-80LS N-channel QFN3333 80 V 23 m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due

5.42. psmn035-100ls.pdf Size:387K _philips2

PSMN070-200P
PSMN070-200P

PSMN035-100LS N-channel QFN3333 100 V 32m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency du

5.43. psmn030-150p.pdf Size:180K _philips2

PSMN070-200P
PSMN070-200P

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

5.44. psmn039-100ys.pdf Size:236K _philips2

PSMN070-200P
PSMN070-200P

PSMN039-100YS N-channel LFPAK 100 V 39.5 m? standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

5.45. psmn015-110p.pdf Size:91K _philips2

PSMN070-200P
PSMN070-200P

PSMN015-110P TrenchMOS Standard level FET Rev. 01 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Low gate charge. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Quick refer

5.46. psmn017-60ys.pdf Size:241K _philips2

PSMN070-200P
PSMN070-200P

PSMN017-60YS N-channel LFPAK 60 V 15.7 m? standard level MOSFET Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

5.47. psmn035 150 series.pdf Size:297K _philips2

PSMN070-200P
PSMN070-200P

PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 22 February 2001 Product specification 1. Description SiliconMAX1 products use the latest TrenchMOS2 technology to achieve the lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features Fast switching

5.48. psmn034-100ps.pdf Size:246K _philips2

PSMN070-200P
PSMN070-200P

PSMN034-100PS N-channel 100 V 34.5 m? standard level MOSFET in TO220. Rev. 02 1 March 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

5.49. psmn012-60ys.pdf Size:232K _philips2

PSMN070-200P
PSMN070-200P

PSMN012-60YS N-channel LFPAK 60 V, 11.1 m? standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS prov

5.50. psmn005-25d hg 5.pdf Size:149K _philips2

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibl

5.51. psmn020-100ys.pdf Size:234K _philips2

PSMN070-200P
PSMN070-200P

PSMN020-100YS N-channel 100V 20.5m? standard level MOSFET in LFPAK Rev. 02 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pr

5.52. psmn040-200w.pdf Size:87K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN040-200W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 50 A g RDS(ON) ? 40 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology

5.53. psmn028-100ys.pdf Size:247K _philips2

PSMN070-200P
PSMN070-200P

PSMN028-100YS N-channel LFPAK 100V 27.5 m? standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

5.54. psmn009-100w.pdf Size:93K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 A g RDS(ON) ? 9 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology

5.55. psmn0r9-25ylc.pdf Size:300K _philips2

PSMN070-200P
PSMN070-200P

PSMN0R9-25YLC N-channel 25 V 0.99 m? logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? Hig

5.56. psmn069-100ys.pdf Size:223K _philips2

PSMN070-200P
PSMN070-200P

PSMN069-100YS N-channel LFPAK 100 V 72.4 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pr

5.57. psmn016-100ys.pdf Size:240K _philips2

PSMN070-200P
PSMN070-200P

PSMN016-100YS N-channel 100 V 16.3 m? standard level MOSFET in LFPAK Rev. 03 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

5.58. psmn020-150w.pdf Size:94K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN020-150W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 73 A g RDS(ON) ? 20 m? s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology

5.59. psmn004-25b p 4.pdf Size:105K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS? transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistance RDS(ON) ? 4 m? (VGS = 10 V) g RDS(ON) ? 5 m? (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX products use the latest Phi

5.60. psmn015-100 series hg 3.pdf Size:153K _philips2

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID

5.61. psmn005-55b p hg.pdf Size:120K _philips2

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75

5.62. psmn010-55d 4.pdf Size:100K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS? transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatible RDS(ON) ? 10.5 m? (VGS = 10 V) g RDS(ON) ? 12 m? (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use

5.63. psmn017-30ll.pdf Size:397K _philips2

PSMN070-200P
PSMN070-200P

PSMN017-30LL N-channel QFN3333 30 V 17 m? logic level MOSFET Rev. 03 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low

5.64. psmn063-150d 2.pdf Size:97K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 A g RDS(ON) ? 63 m? s GENERAL DESCRIPTION PINNING SOT428 (Dpak) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench techno

5.65. psmn027-100ps.pdf Size:238K _philips2

PSMN070-200P
PSMN070-200P

PSMN027-100PS N-channel 100V 26.8 m? standard level MOSFET in TO220 Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency du

5.66. psmn013-100es.pdf Size:213K _philips2

PSMN070-200P
PSMN070-200P

PSMN013-100ES N-channel 100 V 13.9 m? standard level MOSFET in I2PAK Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low c

5.67. psmn011-80ys.pdf Size:219K _philips2

PSMN070-200P
PSMN070-200P

PSMN011-80YS N-channel LFPAK 80 V 11 m? standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

5.68. psmn013-80ys.pdf Size:221K _philips2

PSMN070-200P
PSMN070-200P

PSMN013-80YS N-channel LFPAK 80 V 12.9 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

5.69. psmn035-150 series hg 3.pdf Size:152K _philips2

PSMN070-200P
PSMN070-200P

DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID

5.70. psmn005 75p 75b.pdf Size:271K _philips2

PSMN070-200P
PSMN070-200P

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications High freq

5.71. psmn013-100ps.pdf Size:170K _philips2

PSMN070-200P
PSMN070-200P

PSMN013-100PS N-channel 100V 13.9m? standard level MOSFET in TO220. Rev. 02 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

5.72. psmn030-60ys.pdf Size:219K _philips2

PSMN070-200P
PSMN070-200P

PSMN030-60YS N-channel LFPAK 60 V 24.7 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS prov

5.73. psmn008 75p 75b.pdf Size:108K _philips2

PSMN070-200P
PSMN070-200P

PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Fast switching Low on-state resistance Avalanche ruggedness rated Low thermal resistance. 1.3 Applications DC-to-DC con

5.74. psmn015-100p 100b.pdf Size:101K _philips2

PSMN070-200P
PSMN070-200P

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-mode power

5.75. psmn018-80ys.pdf Size:225K _philips2

PSMN070-200P
PSMN070-200P

PSMN018-80YS N-channel LFPAK 80 V 18 m? standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

5.76. psmn045-80ys.pdf Size:233K _philips2

PSMN070-200P
PSMN070-200P

PSMN045-80YS N-channel LFPAK 80 V 45 m? standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

5.77. psmn022-30pl.pdf Size:211K _philips2

PSMN070-200P
PSMN070-200P

PSMN022-30PL N-channel 30 V 22 m? logic level MOSFET Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching

5.78. psmn003-25w 3.pdf Size:99K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS? transistor PSMN003-25W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance RDS(ON) ? 3.2 m? (VGS = 10 V) g RDS(ON) ? 3.5 m? (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products us

5.79. psmn025-100d 2.pdf Size:97K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) ? 25 m? s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench techno

5.80. psmn026-80ys.pdf Size:225K _philips2

PSMN070-200P
PSMN070-200P

PSMN026-80YS N-channel LFPAK 80 V 27.5 m? standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

5.81. psmn003 30p-b.pdf Size:291K _philips2

PSMN070-200P
PSMN070-200P

PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features Low on-state resistance Fast switching. 3. Applications

5.82. psmn009 100p 100b-01.pdf Size:271K _philips2

PSMN070-200P
PSMN070-200P

PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications High

5.83. psmn012-80ps.pdf Size:221K _philips2

PSMN070-200P
PSMN070-200P

PSMN012-80PS N-channel 80 V 11 m? standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switchi

5.84. psmn013-30ll.pdf Size:399K _philips2

PSMN070-200P
PSMN070-200P

PSMN013-30LL N-channel QFN3333 30 V 13 m? logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low

5.85. psmn015-60ps.pdf Size:190K _philips2

PSMN070-200P
PSMN070-200P

PSMN015-60PS N-channel 60 V 14.8 m? standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? High efficiency due to low switc

5.86. psmn012-100ys.pdf Size:232K _philips2

PSMN070-200P
PSMN070-200P

PSMN012-100YS N-channel 100V 12m? standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pr

5.87. psmn004-55w.pdf Size:97K _philips2

PSMN070-200P
PSMN070-200P

Philips Semiconductors Product specification N-channel logic level TrenchMOS? transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) ? 4.2 m? (VGS = 10 V) g RDS(ON) ? 4.5 m? (VGS = 5 V) s RDS(ON) ? 5 m? (VGS = 4.5 V) GENERAL DES

5.88. psmn050-80ps.pdf Size:217K _philips2

PSMN070-200P
PSMN070-200P

PSMN050-80PS N-channel 80 V 50 m? standard level MOSFET Rev. 01 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switchi

5.89. psmn014-40ys.pdf Size:218K _philips2

PSMN070-200P
PSMN070-200P

PSMN014-40YS N-channel LFPAK 40 V, 14 m? standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

5.90. psmn016-100ps.pdf Size:236K _philips2

PSMN070-200P
PSMN070-200P

PSMN016-100PS N-channel 100V 16 m? standard level MOSFET in TO220 Rev. 01 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

5.91. psmn038 100k.pdf Size:271K _nxp

PSMN070-200P
PSMN070-200P

PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

5.92. psmn005-30k.pdf Size:185K _nxp

PSMN070-200P
PSMN070-200P

PSMN005-30K N-channel TrenchMOS SiliconMAX logic level FET Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applicati

5.93. psmn085-150k.pdf Size:179K _nxp

PSMN070-200P
PSMN070-200P

PSMN085-150K N-channel TrenchMOS SiliconMAX standard level FET Rev. 3 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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