All MOSFET. PSMN130-200D Datasheet

 

PSMN130-200D MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN130-200D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 65 nC

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: DPAK

PSMN130-200D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN130-200D Datasheet (PDF)

1.1. psmn130-200d hg 3.pdf Size:150K _philips

PSMN130-200D
PSMN130-200D

DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN130-200D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 20 A g R

1.2. psmn130-200d.pdf Size:261K _inchange_semiconductor

PSMN130-200D
PSMN130-200D

Isc N-Channel MOSFET Transistor PSMN130-200D ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 5.1. psmn1r3-30yl.pdf Size:213K _philips

PSMN130-200D
PSMN130-200D

PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

5.2. psmn102-200y.pdf Size:332K _philips

PSMN130-200D
PSMN130-200D

PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 — 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial appl

 5.3. psmn1r8-30pl.pdf Size:218K _philips

PSMN130-200D
PSMN130-200D

PSMN1R8-30PL N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

5.4. psmn1r5-40ps.pdf Size:235K _philips

PSMN130-200D
PSMN130-200D

PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220. Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 (SOT78) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High e

 5.5. psmn1r7-25ylc.pdf Size:340K _philips

PSMN130-200D
PSMN130-200D

PSMN1R7-25YLC N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.6. psmn1r0-30ylc.pdf Size:253K _philips

PSMN130-200D
PSMN130-200D

PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK Rev. 03 — 17 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Powe

5.7. psmn1r1-25ylc.pdf Size:384K _philips

PSMN130-200D
PSMN130-200D

PSMN1R1-25YLC N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.8. psmn1r2-25ylc.pdf Size:341K _philips

PSMN130-200D
PSMN130-200D

PSMN1R2-25YLC N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.9. psmn1r6-30pl.pdf Size:225K _philips

PSMN130-200D
PSMN130-200D

PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low swit

5.10. psmn1r5-30yl.pdf Size:400K _philips

PSMN130-200D
PSMN130-200D

PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS

5.11. psmn1r5-40es.pdf Size:227K _philips

PSMN130-200D
PSMN130-200D

PSMN1R5-40ES N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK. Rev. 01 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High

5.12. psmn1r2-30ylc.pdf Size:342K _philips

PSMN130-200D
PSMN130-200D

PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.13. psmn1r5-30ylc.pdf Size:346K _philips

PSMN130-200D
PSMN130-200D

PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.14. psmn1r2-25yl.pdf Size:212K _philips

PSMN130-200D
PSMN130-200D

PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro

5.15. psmn1r1-30pl.pdf Size:246K _philips

PSMN130-200D
PSMN130-200D

PSMN1R1-30PL N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

5.16. psmn1r7-30yl.pdf Size:299K _philips

PSMN130-200D
PSMN130-200D

PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 1 — 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Advanced TrenchMOS p

5.17. psmn1r5-25yl.pdf Size:199K _philips

PSMN130-200D
PSMN130-200D

PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High effic

5.18. psmn1r1-30el.pdf Size:238K _philips

PSMN130-200D
PSMN130-200D

PSMN1R1-30EL N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK Rev. 2 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

5.19. psmn1r9-25ylc.pdf Size:353K _philips

PSMN130-200D
PSMN130-200D

PSMN1R9-25YLC N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

5.20. psmn1r2-30yld.pdf Size:286K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

5.21. psmn1r8-40ylc.pdf Size:233K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High r

5.22. psmn1r1-40bs.pdf Size:222K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R1-40BS N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  H

5.23. psmn1r9-40pl.pdf Size:255K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R9-40PL N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust constructio

5.24. psmn165 200k.pdf Size:273K _nxp

PSMN130-200D
PSMN130-200D

PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN165-200K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switch

5.25. psmn1r0-40yld.pdf Size:288K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli

5.26. psmn1r0-30yld.pdf Size:234K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFE

5.27. psmn1r6-40ylc.pdf Size:230K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High

5.28. psmn1r8-30bl.pdf Size:209K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R8-30BL N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency du

5.29. psmn1r5-30ble.pdf Size:221K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • Enhanced forward biased safe

5.30. psmn1r4-40yld.pdf Size:280K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 26 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. F

5.31. psmn1r6-30bl.pdf Size:213K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R6-30BL N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due

5.32. psmn1r4-30yld.pdf Size:285K _nxp

PSMN130-200D
PSMN130-200D

PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs wit

Datasheet: PSMN059-150Y , PSMN063-150D , PSMN069-100YS , PSMN070-200B , PSMN070-200P , PSMN085-150K , PSMN0R9-25YLC , PSMN102-200Y , 2N5484 , PSMN165-200K , PSMN1R0-30YLC , PSMN1R1-25YLC , PSMN1R1-30EL , PSMN1R1-30PL , PSMN1R2-25YL , PSMN1R2-25YLC , PSMN1R2-30YLC .

 

 
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