All MOSFET. PSMN1R8-30PL Datasheet

 

PSMN1R8-30PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN1R8-30PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 170 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO220AB

 PSMN1R8-30PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R8-30PL Datasheet (PDF)

 ..1. Size:218K  philips
 psmn1r8-30pl.pdf

PSMN1R8-30PL PSMN1R8-30PL

PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 ..2. Size:814K  nxp
 psmn1r8-30pl.pdf

PSMN1R8-30PL PSMN1R8-30PL

PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 ..3. Size:261K  inchange semiconductor
 psmn1r8-30pl.pdf

PSMN1R8-30PL PSMN1R8-30PL

isc N-Channel MOSFET Transistor PSMN1R8-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:299K  nxp
 psmn1r8-30mlh.pdf

PSMN1R8-30PL PSMN1R8-30PL

PSMN1R8-30MLHN-channel 30 V, 2.1 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimizedwith low gate resistance (RG) for fast-s

 4.2. Size:209K  nxp
 psmn1r8-30bl.pdf

PSMN1R8-30PL PSMN1R8-30PL

PSMN1R8-30BLN-channel 30 V, 1.8 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.3. Size:255K  inchange semiconductor
 psmn1r8-30bl.pdf

PSMN1R8-30PL PSMN1R8-30PL

isc N-Channel MOSFET Transistor PSMN1R8-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCH099N60E | 2SK1917-MR | BLF574

 

 
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