PSMN1R8-30PL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R8-30PL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 270 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.15 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 170 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN1R8-30PL
PSMN1R8-30PL Datasheet (PDF)
psmn1r8-30pl.pdf
PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn1r8-30pl.pdf
PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn1r8-30pl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn1r8-30mlh.pdf
PSMN1R8-30MLHN-channel 30 V, 2.1 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimizedwith low gate resistance (RG) for fast-s
psmn1r8-30bl.pdf
PSMN1R8-30BLN-channel 30 V, 1.8 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du
psmn1r8-30bl.pdf
isc N-Channel MOSFET Transistor PSMN1R8-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... PSMN1R5-30YL , PSMN1R5-30YLC , PSMN1R5-40ES , PSMN1R5-40PS , PSMN1R6-30PL , PSMN1R7-25YLC , PSMN1R7-30YL , PSMN1R7-60BS , AON7410 , PSMN1R9-25YLC , PSMN2R0-30PL , PSMN2R0-30YL , PSMN2R0-60ES , PSMN2R0-60PS , PSMN2R2-25YLC , PSMN2R2-30YLC , PSMN2R2-40PS .
History: IPP100N06S3L-03
