All MOSFET. PSMN3R7-30YLC Datasheet

 

PSMN3R7-30YLC Datasheet and Replacement


   Type Designator: PSMN3R7-30YLC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00395 Ohm
   Package: LFPAK
 

 PSMN3R7-30YLC substitution

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PSMN3R7-30YLC Datasheet (PDF)

 ..1. Size:345K  philips
psmn3r7-30ylc.pdf pdf_icon

PSMN3R7-30YLC

PSMN3R7-30YLCN-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.1. Size:349K  philips
psmn3r7-25ylc.pdf pdf_icon

PSMN3R7-30YLC

PSMN3R7-25YLCN-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.2. Size:286K  nxp
psmn3r7-100bse.pdf pdf_icon

PSMN3R7-30YLC

PSMN3R7-100BSEN-channel 100 V, 3.95 m, standard level MOSFET in D2PAK3 September 2018 Product data sheet1. General descriptionStandard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualifiedto 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very lowRDSon and a very strong linear-mode (SOA) performance.PSMN3R7-100BSE com

 6.3. Size:258K  inchange semiconductor
psmn3r7-100bse.pdf pdf_icon

PSMN3R7-30YLC

Isc N-Channel MOSFET Transistor PSMN3R7-100BSEFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

Datasheet: PSMN3R2-30YLC , PSMN3R3-40YS , PSMN3R4-30PL , PSMN3R5-30LL , PSMN3R5-30YL , PSMN3R5-80ES , PSMN3R5-80PS , PSMN3R7-25YLC , IRFB31N20D , PSMN3R8-30LL , PSMN4R0-25YLC , PSMN4R0-30YL , PSMN4R0-40YS , PSMN4R1-30YLC , PSMN4R3-30PL , PSMN4R3-80ES , PSMN4R3-80PS .

History: IRF2805SPBF | GP2M023A050N | 2SK1168 | SMIRF16N65T8TL | SSH6N80

Keywords - PSMN3R7-30YLC MOSFET datasheet

 PSMN3R7-30YLC cross reference
 PSMN3R7-30YLC equivalent finder
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 PSMN3R7-30YLC substitution
 PSMN3R7-30YLC replacement

 

 
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