PSMN3R7-30YLC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN3R7-30YLC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 79 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.95 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 29 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00395 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN3R7-30YLC
PSMN3R7-30YLC Datasheet (PDF)
psmn3r7-30ylc.pdf

PSMN3R7-30YLCN-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn3r7-25ylc.pdf

PSMN3R7-25YLCN-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn3r7-100bse.pdf

PSMN3R7-100BSEN-channel 100 V, 3.95 m, standard level MOSFET in D2PAK3 September 2018 Product data sheet1. General descriptionStandard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualifiedto 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very lowRDSon and a very strong linear-mode (SOA) performance.PSMN3R7-100BSE com
psmn3r7-100bse.pdf

Isc N-Channel MOSFET Transistor PSMN3R7-100BSEFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
Другие MOSFET... PSMN3R2-30YLC , PSMN3R3-40YS , PSMN3R4-30PL , PSMN3R5-30LL , PSMN3R5-30YL , PSMN3R5-80ES , PSMN3R5-80PS , PSMN3R7-25YLC , IRFB31N20D , PSMN3R8-30LL , PSMN4R0-25YLC , PSMN4R0-30YL , PSMN4R0-40YS , PSMN4R1-30YLC , PSMN4R3-30PL , PSMN4R3-80ES , PSMN4R3-80PS .
History: 2SK3371 | IRFBE30SPBF
History: 2SK3371 | IRFBE30SPBF



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