Справочник MOSFET. PSMN3R7-30YLC

 

PSMN3R7-30YLC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN3R7-30YLC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 29 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00395 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN3R7-30YLC

 

 

PSMN3R7-30YLC Datasheet (PDF)

 ..1. Size:345K  philips
 psmn3r7-30ylc.pdf

PSMN3R7-30YLC PSMN3R7-30YLC

PSMN3R7-30YLCN-channel 30 V 3.95m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.1. Size:349K  philips
 psmn3r7-25ylc.pdf

PSMN3R7-30YLC PSMN3R7-30YLC

PSMN3R7-25YLCN-channel 25 V 3.9 m logic level MOSFET in LFPAK using NextPower technologyRev. 01 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 6.2. Size:286K  nxp
 psmn3r7-100bse.pdf

PSMN3R7-30YLC PSMN3R7-30YLC

PSMN3R7-100BSEN-channel 100 V, 3.95 m, standard level MOSFET in D2PAK3 September 2018 Product data sheet1. General descriptionStandard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualifiedto 175 C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very lowRDSon and a very strong linear-mode (SOA) performance.PSMN3R7-100BSE com

 6.3. Size:258K  inchange semiconductor
 psmn3r7-100bse.pdf

PSMN3R7-30YLC PSMN3R7-30YLC

Isc N-Channel MOSFET Transistor PSMN3R7-100BSEFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

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