PSMN4R3-80ES MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN4R3-80ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 111 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: I2PAK

PSMN4R3-80ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS