PSMN4R3-80ES - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN4R3-80ES
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
Тип корпуса: I2PAK
Аналог (замена) для PSMN4R3-80ES
PSMN4R3-80ES Datasheet (PDF)
psmn4r3-80es.pdf

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
psmn4r3-80es.pdf

PSMN4R3-80ESN-channel 80 V, 4.3 m standard level MOSFET in I2PAKRev. 02 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
psmn4r3-80ps.pdf

PSMN4R3-80PSN-channel 80 V, 4.3 m standard level MOSFET in TO220Rev. 03 18 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency d
psmn4r3-80bs.pdf

PSMN4R3-80BSN-channel 80 V, 4.3 m standard level MOSFET in D2PAKRev. 01 27 December 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effi
Другие MOSFET... PSMN3R7-25YLC , PSMN3R7-30YLC , PSMN3R8-30LL , PSMN4R0-25YLC , PSMN4R0-30YL , PSMN4R0-40YS , PSMN4R1-30YLC , PSMN4R3-30PL , RU6888R , PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , PSMN5R0-100ES , PSMN5R0-100PS , PSMN5R0-30YL .
History: WMM10N65EM | TK30A06N1 | CS2N70HF | AP2311GN | IPP80N04S2-04 | TK2P90E | NCE60ND45G
History: WMM10N65EM | TK30A06N1 | CS2N70HF | AP2311GN | IPP80N04S2-04 | TK2P90E | NCE60ND45G



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