All MOSFET. PSMN5R6-100PS Datasheet

 

PSMN5R6-100PS Datasheet and Replacement


   Type Designator: PSMN5R6-100PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 141 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO220AB
 

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PSMN5R6-100PS Datasheet (PDF)

 ..1. Size:217K  philips
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PSMN5R6-100PS

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO220Rev. 03 2 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 ..2. Size:734K  nxp
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PSMN5R6-100PS

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO22030 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due

 3.1. Size:208K  nxp
psmn5r6-100bs.pdf pdf_icon

PSMN5R6-100PS

PSMN5R6-100BSN-channel 100 V 5.6 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 3.2. Size:356K  inchange semiconductor
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PSMN5R6-100PS

isc N-Channel MOSFET Transistor PSMN5R6-100BSFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

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