Справочник MOSFET. PSMN5R6-100PS

 

PSMN5R6-100PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN5R6-100PS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 141 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для PSMN5R6-100PS

 

 

PSMN5R6-100PS Datasheet (PDF)

 ..1. Size:217K  philips
 psmn5r6-100ps.pdf

PSMN5R6-100PS PSMN5R6-100PS

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO220Rev. 03 2 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 ..2. Size:734K  nxp
 psmn5r6-100ps.pdf

PSMN5R6-100PS PSMN5R6-100PS

PSMN5R6-100PSN-channel 100 V 5.6 m standard level MOSFET in TO22030 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.1.2 Features and benefits High efficiency due

 3.1. Size:208K  nxp
 psmn5r6-100bs.pdf

PSMN5R6-100PS PSMN5R6-100PS

PSMN5R6-100BSN-channel 100 V 5.6 m standard level MOSFET in D2PAKRev. 1 20 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 3.2. Size:356K  inchange semiconductor
 psmn5r6-100bs.pdf

PSMN5R6-100PS PSMN5R6-100PS

isc N-Channel MOSFET Transistor PSMN5R6-100BSFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 6.1. Size:741K  nxp
 psmn5r6-60yl.pdf

PSMN5R6-100PS PSMN5R6-100PS

PSMN5R6-60YLN-channel 60 V, 5.6 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

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