PSMN5R6-100PS. Аналоги и основные параметры

Наименование производителя: PSMN5R6-100PS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 306 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm

Тип корпуса: TO220AB

Аналог (замена) для PSMN5R6-100PS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN5R6-100PS даташит

 ..1. Size:217K  philips
 psmn5r6-100ps.pdf pdf_icon

PSMN5R6-100PS

PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff

 ..2. Size:734K  nxp
 psmn5r6-100ps.pdf pdf_icon

PSMN5R6-100PS

PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

 3.1. Size:208K  nxp
 psmn5r6-100bs.pdf pdf_icon

PSMN5R6-100PS

PSMN5R6-100BS N-channel 100 V 5.6 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff

 3.2. Size:356K  inchange semiconductor
 psmn5r6-100bs.pdf pdf_icon

PSMN5R6-100PS

isc N-Channel MOSFET Transistor PSMN5R6-100BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

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