APT1002R4AN Datasheet and Replacement
Type Designator: APT1002R4AN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO3
APT1002R4AN Datasheet (PDF)
apt1002r4bn.pdf
DTO-247GAPT1002RBN 1000V 7.0A 2.00SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1002RBN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C7.0 6.5AmpsIDM Pulsed Drain Current 1
apt1002rcn.pdf
DTO-254GAPT1002RCN 1000V 5.5A 2.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1002RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C5.5AmpsIDM Pulsed Drain Current 122VGS Gate-Source Voltage30 VoltsTotal Powe
Datasheet: APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , APT10026JN , 2SK3568 , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN .
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