All MOSFET. APT1002R4AN Datasheet

 

APT1002R4AN Datasheet and Replacement


   Type Designator: APT1002R4AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO3
 

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APT1002R4AN Datasheet (PDF)

 5.1. Size:81K  apt
 apt1002r4bnr apt1002rbnr.pdf pdf_icon

APT1002R4AN

 5.2. Size:50K  apt
 apt1002r4bn.pdf pdf_icon

APT1002R4AN

DTO-247GAPT1002RBN 1000V 7.0A 2.00SAPT1002R4BN 1000V 6.5A 2.40POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1002RBN 1002R4BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C7.0 6.5AmpsIDM Pulsed Drain Current 1

 6.1. Size:49K  apt
 apt1002rcn.pdf pdf_icon

APT1002R4AN

DTO-254GAPT1002RCN 1000V 5.5A 2.00STMPOWER MOS IVN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1002RCN UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C5.5AmpsIDM Pulsed Drain Current 122VGS Gate-Source Voltage30 VoltsTotal Powe

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Datasheet: APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , APT10026JN , AON7410 , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN .

History: IPB80N08S2-07 | NTGD4167C

Keywords - APT1002R4AN MOSFET datasheet

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