PSMN6R0-30YLB
MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN6R0-30YLB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 58
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.95
V
|Id|ⓘ - Maximum Drain Current: 71
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
LFPAK
PSMN6R0-30YLB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN6R0-30YLB
Datasheet (PDF)
..1. Size:910K nxp
psmn6r0-30ylb.pdf 
PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
2.1. Size:383K philips
psmn6r0-30yl.pdf
PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
2.2. Size:324K nxp
psmn6r0-30yld.pdf
PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
6.1. Size:910K nxp
psmn6r0-25ylb.pdf
PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
6.2. Size:721K nxp
psmn6r0-25yld.pdf
PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF
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