Справочник MOSFET. PSMN6R0-30YLB

 

PSMN6R0-30YLB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN6R0-30YLB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 58 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 71 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для PSMN6R0-30YLB

 

 

PSMN6R0-30YLB Datasheet (PDF)

 ..1. Size:910K  nxp
 psmn6r0-30ylb.pdf

PSMN6R0-30YLB PSMN6R0-30YLB

PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 2.1. Size:383K  philips
 psmn6r0-30yl.pdf

PSMN6R0-30YLB PSMN6R0-30YLB

PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit

 2.2. Size:324K  nxp
 psmn6r0-30yld.pdf

PSMN6R0-30YLB PSMN6R0-30YLB

PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET

 6.1. Size:910K  nxp
 psmn6r0-25ylb.pdf

PSMN6R0-30YLB PSMN6R0-30YLB

PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef

 6.2. Size:721K  nxp
 psmn6r0-25yld.pdf

PSMN6R0-30YLB PSMN6R0-30YLB

PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF

Другие MOSFET... PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , 5N50 , PSMN6R5-25YLC , PSMN6R5-80PS , PSMN7R0-100ES , PSMN7R0-100PS , PSMN7R0-100XS , PSMN7R0-30YL , PSMN7R0-30YLC , PSMN7R0-40LS .

 

 
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