All MOSFET. PSMN7R6-60PS Datasheet

 

PSMN7R6-60PS MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN7R6-60PS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 149 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 92 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm

Package: TO220AB

PSMN7R6-60PS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN7R6-60PS Datasheet (PDF)

1.1. psmn7r6-60ps.pdf Size:213K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R6-60PS N-channel 60 V 7.8 m? standard level MOSFET Rev. 03 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low

4.1. psmn7r0-40ls.pdf Size:375K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R0-40LS N-channel QFN3333 40 V 7.0 m? standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency du

4.2. psmn7r0-100ps.pdf Size:243K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R0-100PS N-channel 100V 6.8 m? standard level MOSFET in TO220 Rev. 02 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

 4.3. psmn7r0-30yl.pdf Size:385K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R0-30YL N-channel 30 V 7 m? logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ? Hig

4.4. psmn7r0-60ys.pdf Size:238K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m? standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

 4.5. psmn7r0-100es.pdf Size:241K _philips2

PSMN7R6-60PS
PSMN7R6-60PS

PSMN7R0-100ES N-channel 100V 6.8 m? standard level MOSFET in I2PAK. Rev. 03 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

Datasheet: PSMN7R0-100ES , PSMN7R0-100PS , PSMN7R0-100XS , PSMN7R0-30YL , PSMN7R0-30YLC , PSMN7R0-40LS , PSMN7R0-60YS , PSMN7R5-25YLC , IRF640 , PSMN8R0-30YL , PSMN8R0-30YLC , PSMN8R0-40PS , PSMN8R2-80YS , PSMN8R3-40YS , PSMN8R5-60YS , PSMN8R7-80PS , PSMN9R0-25YLC .

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